ThuliumV1, Main, Exploration, bibRecord, 000626

Spectroscopic properties of 1.8 μm emission in Tm3+ doped bismuth silicate glass

Identifieur interne : 000626 ( Main/Exploration ); précédent : 000625; suivant : 000627

Spectroscopic properties of 1.8 μm emission in Tm3+ doped bismuth silicate glass

Auteurs : GUOYING ZHAO [République populaire de Chine] ; YING TIAN [République populaire de Chine] ; XIN WANG [République populaire de Chine] ; HUIYAN FAN [République populaire de Chine] ; LILI HU [République populaire de Chine]

Source :

Journal of luminescence [ 0022-2313 ] ; 2013.

RBID : Pascal:13-0078644

Descripteurs français

Pascal (Inist)
- Addition thulium, Oxyde de bismuth, Spectre Raman, Oxyde de titane, Oxyde de lithium, Phonon, Silicate, Matériau dopé, Transition vitreuse, Cristallisation, Fusion, Oxyde de sodium, Oxyde de silicium, Effet Judd Ofelt, Fluorescence, Déclin luminescence, Composé binaire, Bi2O3, 8105K, Bi O, 7855Q, 7830L.

English descriptors

KwdEn :
- Binary compounds, Bismuth oxide, Crystallization, Doped materials, Fluorescence, Glass transition, Judd Ofelt effect, Lithium oxide, Luminescence decay, Melting, Phonons, Raman spectra, Silicates, Silicon oxides, Sodium oxide, Thulium additions, Titanium oxide.

Abstract

The emission properties around 1.8 μm in Tm³⁺ doped bismuth silicate glass have been investigated. Based on the obtained Raman spectroscopy and differential scanning calorimetry curves, it is found the introduced Bi₂O₃ can efficiently reduce the phonon energy of silicate glass to 926 cm^-1. The energy gap between glass transition temperature and onset temperature of crystallization is 169 C. The OH^- content maintains lower in glass by bubbling dry O₂ during the melting process. The cut-off wavelength in mid-infrared range is as long as 5 μm. Bismuth silicate glass has high radiative transition probability of 238.80 s^-1 corresponding to the Tm³⁺:³F₄→³H₆ transition compared with conventional silicate glasses. The strongest emission at 1.8 μm with a large full width at half-maximum of 238 nm is achieved from this bismuth silicate glass doped with 0.9 mol% Tm₂O₃. Its fluorescence lifetime at 1.8 μm is 640 μs.

Affiliations:

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Le document en format XML

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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term>
<term>Bismuth oxide</term>
<term>Crystallization</term>
<term>Doped materials</term>
<term>Fluorescence</term>
<term>Glass transition</term>
<term>Judd Ofelt effect</term>
<term>Lithium oxide</term>
<term>Luminescence decay</term>
<term>Melting</term>
<term>Phonons</term>
<term>Raman spectra</term>
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<term>Thulium additions</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Addition thulium</term>
<term>Oxyde de bismuth</term>
<term>Spectre Raman</term>
<term>Oxyde de titane</term>
<term>Oxyde de lithium</term>
<term>Phonon</term>
<term>Silicate</term>
<term>Matériau dopé</term>
<term>Transition vitreuse</term>
<term>Cristallisation</term>
<term>Fusion</term>
<term>Oxyde de sodium</term>
<term>Oxyde de silicium</term>
<term>Effet Judd Ofelt</term>
<term>Fluorescence</term>
<term>Déclin luminescence</term>
<term>Composé binaire</term>
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<front><div type="abstract" xml:lang="en">The emission properties around 1.8 μm in Tm<sup>3+</sup>
 doped bismuth silicate glass have been investigated. Based on the obtained Raman spectroscopy and differential scanning calorimetry curves, it is found the introduced Bi<sub>2</sub>
O<sub>3</sub>
 can efficiently reduce the phonon energy of silicate glass to 926 cm<sup>-1</sup>
. The energy gap between glass transition temperature and onset temperature of crystallization is 169 C. The OH<sup>-</sup>
 content maintains lower in glass by bubbling dry O<sub>2</sub>
 during the melting process. The cut-off wavelength in mid-infrared range is as long as 5 μm. Bismuth silicate glass has high radiative transition probability of 238.80 s<sup>-1</sup>
 corresponding to the Tm<sup>3+</sup>
:<sup>3</sup>
F<sub>4</sub>
→<sup>3</sup>
H<sub>6</sub>
 transition compared with conventional silicate glasses. The strongest emission at 1.8 μm with a large full width at half-maximum of 238 nm is achieved from this bismuth silicate glass doped with 0.9 mol% Tm<sub>2</sub>
O<sub>3</sub>
. Its fluorescence lifetime at 1.8 μm is 640 μs.</div>
</front>
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<affiliations><list><country><li>République populaire de Chine</li>
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</noRegion>
<name sortKey="Guoying Zhao" sort="Guoying Zhao" uniqKey="Guoying Zhao" last="Guoying Zhao">GUOYING ZHAO</name>
<name sortKey="Huiyan Fan" sort="Huiyan Fan" uniqKey="Huiyan Fan" last="Huiyan Fan">HUIYAN FAN</name>
<name sortKey="Lili Hu" sort="Lili Hu" uniqKey="Lili Hu" last="Lili Hu">LILI HU</name>
<name sortKey="Xin Wang" sort="Xin Wang" uniqKey="Xin Wang" last="Xin Wang">XIN WANG</name>
<name sortKey="Xin Wang" sort="Xin Wang" uniqKey="Xin Wang" last="Xin Wang">XIN WANG</name>
<name sortKey="Ying Tian" sort="Ying Tian" uniqKey="Ying Tian" last="Ying Tian">YING TIAN</name>
<name sortKey="Ying Tian" sort="Ying Tian" uniqKey="Ying Tian" last="Ying Tian">YING TIAN</name>
</country>
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</record>

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Spectroscopic properties of 1.8 μm emission in Tm3+ doped bismuth silicate glass

Spectroscopic properties of 1.8 μm emission in Tm3+ doped bismuth silicate glass

Source :

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri